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Method of Increasing the Deposition and Etch Rates in Plasma Processes

IP.com Disclosure Number: IPCOM000050656D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hinkel, H: AUTHOR [+3]

Abstract

A method is described in which magnetic fields locally confined to the substrates are used for RF plasma deposition and RF plasma etching.

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Method of Increasing the Deposition and Etch Rates in Plasma Processes

A method is described in which magnetic fields locally confined to the substrates are used for RF plasma deposition and RF plasma etching.

From plasma physics, it is known that magnetic fields influence RP plasma. In the cases that have become known so far, the magnetic fields influence the whole plasma, so that the characteristics of the whole plasma volume are dependent upon the magnetic field.

In accordance with the present method the magnetic fields are locally confined to the substrates during RF plasma deposition and RP plasma etching; only the charged plasma particles close to or at the substrate surface are affected; i.e., the surface processes can be controlled independently of reactions in the plasma volume.

The local influence of the magnetic fields leads to a higher deposition rate during plasma etching and to a shorter reaction period. During etching, the etch rate ratios of the various materials are influenced.

In experiments, permanent magnets or electromagnets were arranged below the substrates in such a manner that the magnetic vector acting on the substrate surface is either perpendicular or parallel to the E field of the plasma reactor. During the plasma deposition of SiN(x), using a magnetic field H perpendicular to the E field of the plasma reactor, the deposition rate could be increased by 50 percent. The diffraction index and the etch rate were the same as for a monitor ...