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Eliminating Semiconductor Device Degradation due to Positive Ion Accumulation

IP.com Disclosure Number: IPCOM000050691D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Carlson, HA: AUTHOR [+2]

Abstract

The deleterious effects of positive ions in the passivation layers of semiconductor devices can be eliminated by exposing the devices to an oxygen plasma (as in plasma asher) at the appropriate stage of manufacturing.

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Eliminating Semiconductor Device Degradation due to Positive Ion Accumulation

The deleterious effects of positive ions in the passivation layers of semiconductor devices can be eliminated by exposing the devices to an oxygen plasma (as in plasma asher) at the appropriate stage of manufacturing.

The mechanism may be the embedment of negative oxygen ions into the passivation layers (Si(3)N(4) and/or SiO(2)) and consequent neutralization of any positive ions.

The technique is simple, utilizes inexpensive equipment, and has the added advantage of removing any organic contaminants from the device surfaces. Ashing times required are less than 1 hour.

Bipolar devices with severly degraded reverse breakdown characteristics can recover from less than 1 volt to more than 100 volts. The technique should be extendable to FET devices as well.

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