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Laser Induced Chemical Etching of Ferrites

IP.com Disclosure Number: IPCOM000050708D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Addy, J: AUTHOR [+3]

Abstract

A maskless method of etching ferrite materials with a laser at an etch rate of 0.6 to 20 Mu/seconds is described. An argon ion laser is focused on a ferrite, for example, manganese zinc ferrite, that is surrounded by a halomethane gas. Trifluorochloromethane and carbon tetrachloride are preferred gases, although experiments with CF(4) and SF(6) indicate that many halogen-containing gases can be used as the etchant atmosphere. The laser power is varied from 0.5 to 3 watts with the lower power yielding a slower etch rate with higher resolution.

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Laser Induced Chemical Etching of Ferrites

A maskless method of etching ferrite materials with a laser at an etch rate of
0.6 to 20 Mu/seconds is described. An argon ion laser is focused on a ferrite, for example, manganese zinc ferrite, that is surrounded by a halomethane gas. Trifluorochloromethane and carbon tetrachloride are preferred gases, although experiments with CF(4) and SF(6) indicate that many halogen-containing gases can be used as the etchant atmosphere. The laser power is varied from 0.5 to 3 watts with the lower power yielding a slower etch rate with higher resolution.

Features from 7 to 150 microns in size can be etched. In general, the reaction products formed during etching are nonvolatile at room temperature and tend to deposit on the ferrite surface. The reaction products formed in a CCl(4) atmosphere are easily washed off in acetone.

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