Browse Prior Art Database

Mesh Structure for Electroluminescent Storage CRT Without Transparent Conductor

IP.com Disclosure Number: IPCOM000050761D
Original Publication Date: 1982-Dec-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 3 page(s) / 33K

Publishing Venue

IBM

Related People

Sahni, O: AUTHOR

Abstract

This publication describes a mesh structure for a large-area electroluminescent (EL) faceplate in storage CRT. The disclosed mesh structure eliminates the requirement of a transparent conductive layer.

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Mesh Structure for Electroluminescent Storage CRT Without Transparent Conductor

This publication describes a mesh structure for a large-area electroluminescent (EL) faceplate in storage CRT. The disclosed mesh structure eliminates the requirement of a transparent conductive layer.

The resistance of the transparent conductor bottom layer (viewing side) causes a voltage drop, phase shift, and especially an excessive power dissipation in the electrode layer. This poses a major problem for large-area faceplates, and marginally acceptable operation is possible only at low frequencies (e.g., 500 Hz) with sine waves. However, the severe price one has to pay is a proportionately lower luminance. Further, with sine waves, the E- beam switching of an EL faceplate can only be performed for about half the time period of the sustaining voltage waveform, thereby leading to a reduction in the time required to write the whole faceplate.

A resistive mesh structure which provides current-limiting resistance between a conducting mesh and multiplicity of a small-area active region was recently proposed. The conducting mesh of such a proposed structure is disposed on a thick dielectric layer to reduce the possibility of catastrophic breakdown under the conductor.

The present structure is based on the realization that the reverse configuration from the proposed structure would form a resistive mesh structure which no longer requires a transparent conducting layer. However, it is necessary now to improve the contrast by depositing a black layer which is patterned into a mesh, on which is disposed the thick dielectric layer mesh of the bottom conductor mesh. Further, the resistive layer should now be transparent so as to transmit the EL luminance.

The drawing shows the present structure in cross section. The first layer is the black cermet film 1 (e.g., 2,000 Angstroms of Au:MgO) which is patterned into a...