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Plasma Planarization Using Differential Etch Rate Ratio

IP.com Disclosure Number: IPCOM000051063D
Original Publication Date: 1982-Aug-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Kaminsky, E: AUTHOR [+3]

Abstract

A plasma planarization process uses a differential (glass to organic) etch-rate ratio in lieu of a conventional 1:1 ratio to improve the smoothness, i.e., flatness or planarity, of the glass insulation which covers the conductors of an integrated circuit (IC) member. Plasma planarization is described, for example, by A. C. Adams, in "Plasma Planarization, Solid State Technology, April 1981, pages 178-181.

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Plasma Planarization Using Differential Etch Rate Ratio

A plasma planarization process uses a differential (glass to organic) etch- rate ratio in lieu of a conventional 1:1 ratio to improve the smoothness, i.e., flatness or planarity, of the glass insulation which covers the conductors of an integrated circuit (IC) member. Plasma planarization is described, for example, by A. C. Adams, in "Plasma Planarization, Solid State Technology, April 1981, pages 178-181.

Fig. 1 shows a typical metal conductor 1 affixed to a silicon IC substrate S and over which has been sputtered a glass (SiO(2)) coating 2, which is to be planarized. More particularly, the conformal step-like portion, i.e., step 2', of height H (referred to as the 100 percent step height) of the coating 2, which forms as a result of being sputtered over conductor 1, is to be removed by the plasma planarization process.

In the present process, an organic coating 3 (Fig. 2) is applied over the coating 2, also resulting in the formation of a conformal step in the organic coating 3 of approximately .35H over the glass step 2'. Thereafter, coating 3 is baked at a time and temperature that aids in adjusting the etch rate of the organic coating 3 to be a fraction of the SiO(2) coating 2 etch rate to provide the aforementioned differential (glass to organic) etch-rate ratio.

Next, the assembly 1-3 is subjected to a reactive ion etch (RIE) process through the outer surface of coating 3. Initially, the RIE process a...