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Cermet Sputtering Target with High Density Quartz Composition

IP.com Disclosure Number: IPCOM000051344D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cistola, AB: AUTHOR [+3]

Abstract

In a known Cr/Cr(3)Si/SiO(2) composition for making sputtering targets as those employed with making cermet (CrSiO) resistors, the SiO(2) ingredient has a cristobalite crystalline form. During the sputtering operation such targets have the tendency to crack, resulting in rapid deterioration and hence short lifetime of the target. By replacing the cristobalite ingredient with a high density crystalline form, e.g., stishovite, coesite and their closely related low-quartz and high-quartz crystalline forms, cracking and deterioration are mitigated, resulting in an extended lifetime of the target.

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Cermet Sputtering Target with High Density Quartz Composition

In a known Cr/Cr(3)Si/SiO(2) composition for making sputtering targets as those employed with making cermet (CrSiO) resistors, the SiO(2) ingredient has a cristobalite crystalline form.

During the sputtering operation such targets have the tendency to crack, resulting in rapid deterioration and hence short lifetime of the target. By replacing the cristobalite ingredient with a high density crystalline form, e.g., stishovite, coesite and their closely related low-quartz and high-quartz crystalline forms, cracking and deterioration are mitigated, resulting in an extended lifetime of the target.

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