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Lowered Stress, Crack Free Electroless Ni Deposits

IP.com Disclosure Number: IPCOM000051362D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Herron, LW: AUTHOR [+3]

Abstract

In semiconductor packaging, as well as other applications, it is frequently desirable and conventional to deposit electroless (E/L) nickel layers or film.

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Lowered Stress, Crack Free Electroless Ni Deposits

In semiconductor packaging, as well as other applications, it is frequently desirable and conventional to deposit electroless (E/L) nickel layers or film.

E/L nickel is deposited to a required thickness of 120-180 micro-inches and then diffused. Standard diffusion is normally performed in forming gas at approximately 60 degrees C/min. rise and fall rates with no thermal holds in any portion of the cycle.

This modification enables the achieving of a crack-resistant, lowered stress structure by the specific control of the rate of heat and cool down with an accompanying hold at peak temperature of 700 degrees C in an atmosphere of forming gas.

The following is a heating schedule of a diffusion cycle for E/L nickel: See Original.

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