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Source Vapor Distribution Baffle for Vacuum Systems

IP.com Disclosure Number: IPCOM000051363D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Brown, WW: AUTHOR [+2]

Abstract

In vapor deposition of semiconductors, when source to substrate distanc and/or dome peripheral edge coverage (outer row) is insufficient, the source vapor distribution baffle described here changes the vapor cloud to successfully cover the entire dome.

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Source Vapor Distribution Baffle for Vacuum Systems

In vapor deposition of semiconductors, when source to substrate distanc and/or dome peripheral edge coverage (outer row) is insufficient, the source vapor distribution baffle described here changes the vapor cloud to successfully cover the entire dome.

The source vapor distribution baffle is an inverted cone extending into or directly above a source cup. The cone size and shape is dependent on desired effect. Fig. 1 depicts the initial condition of incomplete dome coverage, and Fig. 2 depicts the improved dome coverage.

The source vapor distribution baffle is also unique because within a set of physical limitations, i.e., vacuum chamber and source-to-substrate distance, it allows the largest physical dome to be placed into a vacuum system to achieve its fullest manufacturing batch size potential. Generally, existing sources will not require modifications to work with this baffle. The source vapor distribution baffle can be made of any appropriate material.

One application of the source vapor distribution baffle is in a PbSn evaporation system.

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