Browse Prior Art Database

Electron-Beam Resist Developers

IP.com Disclosure Number: IPCOM000051368D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chiu, GT: AUTHOR [+2]

Abstract

Adding small amounts of oxidizing agents to resist developers slows dow the dissolution rate of unexposed positive resist layers in high pattern factor areas which are subject to large proximity effects due to electron backscattering.

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Electron-Beam Resist Developers

Adding small amounts of oxidizing agents to resist developers slows dow the dissolution rate of unexposed positive resist layers in high pattern factor areas which are subject to large proximity effects due to electron backscattering.

Positive novolak resin containing diazoquinone resists is exposed patternwise to an electron beam and developed with mildly alkaline developers. The ratio of R/Ro (i.e., the ratio of the rate, R, of dissolution of the exposed resist areas to the rate, Ro, of dissolution of the unexposed resist areas) is found to be lower where proximity effects cause high Ro rates in high pattern areas. These rates are reduced by adding up to 5.0% by weight of an oxidizing agent, for example, potassium permanganate or potassium dichromate, to the alkaline developer.

The table below shows the results of adding oxidizing agents to the developer. See Original.

The amounts of oxidizing agents are selected so that the development time is not excessive. Mixtures of oxidizing agents can also be used.

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