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Self-Aligned, Nitride Passivated, Emitter Compensated, High Gain Bipolar Devices

IP.com Disclosure Number: IPCOM000051372D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 79K

Publishing Venue

IBM

Related People

Das, G: AUTHOR [+3]

Abstract

As shown in Fig. 1, resist mask 1 is formed on a 1600 angstroms thick s dioxide layer 2 which is formed by reoxidation of epitaxial silicon grown on P type silicon substrate 3 which contains N+ subcollector 4, recessed oxide isolation regions 5 and P+ isolation regions 6. N+ reach-through region 7 is ion-implanted through layer 2, using resist mask 1, to contact the N+ subcollector 4.

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Self-Aligned, Nitride Passivated, Emitter Compensated, High Gain Bipolar Devices

As shown in Fig. 1, resist mask 1 is formed on a 1600 angstroms thick s dioxide layer 2 which is formed by reoxidation of epitaxial silicon grown on P type silicon substrate 3 which contains N+ subcollector 4, recessed oxide isolation regions 5 and P+ isolation regions 6. N+ reach-through region 7 is ion-implanted through layer 2, using resist mask 1, to contact the N+ subcollector 4.

Resist layer 1 is removed, a second patterned resist layer 8 (Fig. 2) is formed, and a deep base ion implant is made to form intrinsic base region 9. Exposed layer 2 is etched down to the silicon and resist layer 8 is removed.

A 250-500 Angstroms thick base oxide layer 10 is grown in steam containing HCl (Fig. 3). A 1400 Angstroms thick layer 11 of boron-doped silicon dioxide is grown followed by a 500-1600 Angstroms thick layer 12 of silicon nitride. Patterned resist layer 13 is formed, and the exposed silicon nitride is etched down to oxide layer 11 to form the pattern of contact openings.

Resist layer 13 is stripped, a resist block-out mask is formed, and the emitter and the collector are opened through layers 11 and 10, and 11 and 2, respectively. Emitter 14 is formed by ion implantation and an anneal. A new resist layer is then formed, and the base and Schottky contacts are opened to give the structure shown in Fig. 4.

This structure allows Schottky diodes to be fabricated. Moreover, a resistor can...