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Single Layer Photoresist Profiling

IP.com Disclosure Number: IPCOM000051393D
Original Publication Date: 1981-Jan-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Bohlen, H: AUTHOR [+3]

Abstract

This article describes a method which permits different laterally structured resist profiles to be generated by means of a single resist layer. By this method one resist layer is partially stabilized with the aid of electron beam radiation. Subsequently, the whole resist layer is subjected to post-baking. Dry etching allows imaging of the steep and rounded resist profile into underlying layers.

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Single Layer Photoresist Profiling

This article describes a method which permits different laterally structured resist profiles to be generated by means of a single resist layer. By this method one resist layer is partially stabilized with the aid of electron beam radiation. Subsequently, the whole resist layer is subjected to post-baking. Dry etching allows imaging of the steep and rounded resist profile into underlying layers.

Reactive ion etching necessitates a high etch rate for economical reasons. However, a high etch rate causes the wafer, including the photoresist masks used for etching, to be heavily heated. At a temperature of about 120 degrees C, photoresist masks begin to flow, leading to a considerable change in the mask profile. For this reason, the photoresist masks were subjected to a plasma resist stabilization technique, producing a netlike protective skin on the photoresist. This skin ensured that the mask profile was retained during the subsequent post- baking step at about 180 degrees C. The known method has the disadvantage that the whole photoresist layer on the wafer is treated in the same manner without any distinction being made between different chips or different areas of individual chips.

In accordance with the improved method, the plasma radiation used for resist stabilization is replaced by pure electron beam radiation. A 2 Mum thick layer of AZ 1350J photoresist (product of Shipley Company) is subjected to an electron beam dose whic...