Browse Prior Art Database

Dual Dielectric for Multilevel Metal

IP.com Disclosure Number: IPCOM000051571D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Bartush, TA: AUTHOR

Abstract

A planarized multilevel metal structure is formed by a process which employs a blanket silicon nitride deposition under the metal lift-off masks.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Dual Dielectric for Multilevel Metal

A planarized multilevel metal structure is formed by a process which employs a blanket silicon nitride deposition under the metal lift-off masks.

According to the process, the first level metal 1 is deposited on substrate 2 and patterned in a standard manner. Planar quartz 3 is then deposited, which is equal to the metal thickness, and coated with a planarizing resist layer. The resist and quartz, are etched back to expose the surface of the metal lines and a 500 Angstrom thick layer of silicon nitride 4 is deposited, for example, by plasma deposition. A lift-off structure is deposited and patterned where vias are to be formed by the process described, for example, in U.S. Patent 4,004,044. The exposed nitride layer is then reactively ion etched, the exposed metal is sputter cleaned, and the stud metal 5 is deposited and lifted off. A second insulator 6 of planar quartz or polyimide is deposited, planarized, and etched back to expose studs 4. The next level of metal 7 is then formed and patterned to give the structure shown in the figure.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]