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Method of Determining the Silicon/Nitrogen Ratio in SiN(x) Films and their Bulk Resistivity

IP.com Disclosure Number: IPCOM000051600D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Kraus, G: AUTHOR [+3]

Abstract

The silicon/nitrogen atomic ratio in SiN(x) films produced by plasma-enhanced chemical vapor deposition (PECVD) and their bulk resistivity are determined by means of the appertaining refractive indices (n), using the diagram shown above. The refractive indices are ellipsometrically measured.

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Method of Determining the Silicon/Nitrogen Ratio in SiN(x) Films and their Bulk Resistivity

The silicon/nitrogen atomic ratio in SiN(x) films produced by plasma- enhanced chemical vapor deposition (PECVD) and their bulk resistivity are determined by means of the appertaining refractive indices (n), using the diagram shown above. The refractive indices are ellipsometrically measured.

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