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Method for Magnetically Assisted Sputter Etching and Deposition

IP.com Disclosure Number: IPCOM000051654D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Heiman, N: AUTHOR

Abstract

The use of magnetic fields in sputter deposition is well known. T application of a transverse magnetic field to a conventional planar diode sputter geometry produces a considerable increase in ionization and rate; however, the discharge is swept to one side and the deposition pattern and target etch profile is very nonuniform.

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Method for Magnetically Assisted Sputter Etching and Deposition

The use of magnetic fields in sputter deposition is well known. T application of a transverse magnetic field to a conventional planar diode sputter geometry produces a considerable increase in ionization and rate; however, the discharge is swept to one side and the deposition pattern and target etch profile is very nonuniform.

If the magnetic field is AC rather than DC, much of this problem is eliminated, as the plasma is swept one way and then the other, averaging out the inhomogeneities. An improved version of this concept is to apply a rotating magnetic field. This has the advantage that the field strength and ionizing action and rate remain constant; also, if the rotational frequency is high enough, the electron paths will not only spiral along the field lines, but will also spiral somewhat around the axis of the rotating field, thus increasing the effective path length and ultimately the rate. Furthermore, because of the curvature of the deposition pattern with respect to the target, uniformity over an area larger than the target can be achieved, as illustrated in the figure.

From a technical point of view, obtaining a constant rotating magnetic field is not difficult. Alternating currents can be applied to two pairs of coils arranged at 90 degrees to each other, such that the phase angle of the currents is 90 degrees. The present technique also produces uniform erosion of the target, and can be...