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Method for Obtaining Uniform Josephson-Contact Current Density Distribution

IP.com Disclosure Number: IPCOM000051671D
Original Publication Date: 1981-Feb-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Walter, W: AUTHOR

Abstract

In the production of Josephson contacts it has been difficult to obtain uniform Josephson current densities over the whole area of the wafer. The problem was caused by inhomogeneities of the RF-plasma during the cleaning and oxidation steps. These field inhomogeneities can be substantially reduced by using a grounded counter-electrode of suitable shape and distance from the wafer during plasma treatment.

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Method for Obtaining Uniform Josephson-Contact Current Density Distribution

In the production of Josephson contacts it has been difficult to obtain uniform Josephson current densities over the whole area of the wafer. The problem was caused by inhomogeneities of the RF-plasma during the cleaning and oxidation steps. These field inhomogeneities can be substantially reduced by using a grounded counter-electrode of suitable shape and distance from the wafer during plasma treatment.

A vacuum chamber used for plasma treatments is schematically shown above. The counter-electrode is arranged below the cathode carrying the wafers at a distance a. It has the form of a circular plate, its diameter D being about equal to that of the cathode. Good results have been obtained with the following dimensions. a = 65 mm, D = 120 mm.

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