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Browse Prior Art Database

Positive Photoresist for Permeation Etching

IP.com Disclosure Number: IPCOM000051731D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bergendahl, AS: AUTHOR [+2]

Abstract

A positive photoresist suitable for permeation etching is provided by adding 0.1 to 10 percent imidazole to photoresists comprising a phenol-formaldehyde resin with a diazo-naphthoquinone sensitizer, for example, AZ1350 (product of Shipley Company).

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Positive Photoresist for Permeation Etching

A positive photoresist suitable for permeation etching is provided by adding
0.1 to 10 percent imidazole to photoresists comprising a phenol-formaldehyde resin with a diazo-naphthoquinone sensitizer, for example, AZ1350 (product of Shipley Company).

Permeation etching of silicon dioxide lying under patterned areas of negative photoresist when substrates are exposed to an anhydrous hydrogen fluoride plasma has been previously observed.

Through the use of the above modified positive photoresist, similar results may be achieved. Etching of silicon dioxide under patterned areas of modified positive photoresist occurs at a rate equal to about one-fifth that observed with negative photoresist.

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