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Passivation Process for Semiconductor Device with Fusible Link Redundancy

IP.com Disclosure Number: IPCOM000051734D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 13K

Publishing Venue

IBM

Related People

Davis, DE: AUTHOR [+3]

Abstract

Semiconductor memory devices incorporating fusible link redundancy are provided in which terminal metallurgy is applied to devices prior to testing and fuse blowing. A subsequently applied polyimide passivating layer protects exposed metallurgy and acts as a blocking mask against alpha particle radiation.

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Passivation Process for Semiconductor Device with Fusible Link Redundancy

Semiconductor memory devices incorporating fusible link redundancy are provided in which terminal metallurgy is applied to devices prior to testing and fuse blowing. A subsequently applied polyimide passivating layer protects exposed metallurgy and acts as a blocking mask against alpha particle radiation.

The article, ""A Silicon and Aluminum Dynamic Memory Technology'' by R.
A. Larsen, IBM J. Res. Develop. 24, 268-282 (May 1980), describes a semiconductor manufacturing process in which fusible link programmable redundancy is provided for memory devices in a second level of interconnection metallurgy. Devices are tested at this point and appropriate fuses are blown to program redundant memory addresses. Processing then continues with the application of a polyimide passivating layer followed by deposition of sequential layers of pad-limiting metallurgy, controlled collapse chip connection (C4) pads and final test.

In this method, testing and fuse blowing are delayed until after formation of the C4 pads.

The following process sequence is suggested.

Following the definition of the second level fuse-containing metallurgy, polyimide is applied and partially cured, as in the referenced process.

A photolithographic etching process is used to expose the pad-limiting metallurgy and also the areas in which fuses are present.

Pad limiting metallurgy including sequential layers of chromium, copper and...