Browse Prior Art Database

Elimination of RIE Induced Metallic Contamination

IP.com Disclosure Number: IPCOM000051754D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Das, G: AUTHOR [+2]

Abstract

Heavy metal contaminants incorporated into silicon wafers during reactive ion etching (RIE) can cause serious leakage problems and low device yields. Etch solutions used to remove this contaminant from silicon can themselves leave metallic residues due to their chemical composition.

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Elimination of RIE Induced Metallic Contamination

Heavy metal contaminants incorporated into silicon wafers during reactive ion etching (RIE) can cause serious leakage problems and low device yields. Etch solutions used to remove this contaminant from silicon can themselves leave metallic residues due to their chemical composition.

Pyrocatechol, a non-metal based solution, has been found to be an effective etch solution for silicon. Pyrocatechol is capable of removing the contaminants left after reactive ion etching while simultaneously producing a high yield of MOS devices.

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