Browse Prior Art Database

Sense Diode

IP.com Disclosure Number: IPCOM000051759D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-10
Document File: 2 page(s) / 58K

Publishing Venue

IBM

Related People

Banker, DC: AUTHOR [+3]

Abstract

In the fabrication of FET designs, temperature monitoring is not done with FET devices because of the poor correlation of their forward voltage characteristic with temperature. To meet thermal reliability requirements, a thermal test site that uses a sense diode can be built from a standard FET fabrication. This sense diode is formed by utilizing the P-substrate for its anode and the N-type ion implant (source/drain region) for its cathode. To enhance performance, two anode contacts are used which decreases diode series resistance. The drawing shows the horizontal and vertical geometries of the device.

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Sense Diode

In the fabrication of FET designs, temperature monitoring is not done with FET devices because of the poor correlation of their forward voltage characteristic with temperature. To meet thermal reliability requirements, a thermal test site that uses a sense diode can be built from a standard FET fabrication. This sense diode is formed by utilizing the P-substrate for its anode and the N-type ion implant (source/drain region) for its cathode. To enhance performance, two anode contacts are used which decreases diode series resistance. The drawing shows the horizontal and vertical geometries of the device.

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