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Fixture for Precision Etching of Crystalline Materials

IP.com Disclosure Number: IPCOM000051875D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Kightlinger, DA: AUTHOR [+2]

Abstract

Precision etching of a silicon crystal can be accomplished by providing an etching fixture with a concentric tube etchant supply, etch product removal and neutralizer source. The structure is shown in Fig. 1.

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Fixture for Precision Etching of Crystalline Materials

Precision etching of a silicon crystal can be accomplished by providing an etching fixture with a concentric tube etchant supply, etch product removal and neutralizer source. The structure is shown in Fig. 1.

Fig. 2 shows the etching fixture in position on the silicon wafer. The etchant is fed through tube 1 onto the silicon surface. As the etching process begins, waste is removed through tube 2 by suction. A neutralizer is fed through outer tube 3 and is also removed through tube 2. As the etching process proceeds, the fixture is lowered into the hole.

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