Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Process for Batch Cleaving GaAs and Similar Materials

IP.com Disclosure Number: IPCOM000051876D
Original Publication Date: 1981-Mar-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Potemski, RM: AUTHOR [+2]

Abstract

Batch cleaving of GaAs wafers and similar materials may be done by scribing the wafer surface and then controllably bending the wafer so that it fractures along the scribe lines.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 55% of the total text.

Page 1 of 1

Process for Batch Cleaving GaAs and Similar Materials

Batch cleaving of GaAs wafers and similar materials may be done by scribing the wafer surface and then controllably bending the wafer so that it fractures along the scribe lines.

The cleavage planes in GaAs are (110) planes. Devices which require such planes to be normal to the plane of the device structure (e.g., the epitaxial layers which form an injection laser) are grown on an appropriate orientation to make this possible, e.g., the (100) plane. In order to cleave by this method, the following conditions are necessary: (a) As is well known, to cleave bars of a given length L, the wafer should be of thickness L/2 or less. (b) For this process, both surfaces of the wafer should be free of damage (such as may be caused by lapping). (c) Intentional damage is introduced onto one surface of the wafer by means of a diamond or other suitable scriber. This damage should be in the form of short lines parallel to the direction of the desired cleave (the cleavage directions must have been identified previously). It must be noted that the cleave under the scribe will not be of high quality. This damage simply serves to start a high quality cleave. Using a GaAs wafer 100 mu m thick and 2 cm x 2 cm, scribes 300 mu m or less can produce bars with perfectly cleaved surfaces over the remainder of the 2 cm length. (d) Cleaving is achieved by controlled bending of the scribed wafer so that the plane of the radius is normal to...