Browse Prior Art Database

Semiconductor Pad Terminal Metallurgy

IP.com Disclosure Number: IPCOM000051911D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Aimi, BR: AUTHOR

Abstract

This method and structure provide an improved bond between metallurgica layers used in forming pads for controlled-collapse-chip-connection (C4) terminal metallurgy. A delamination problem occurring between chromium and upper layers is avoided by the substitution of a layer of aluminum for that of chromium.

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Semiconductor Pad Terminal Metallurgy

This method and structure provide an improved bond between metallurgica layers used in forming pads for controlled-collapse-chip-connection (C4) terminal metallurgy. A delamination problem occurring between chromium and upper layers is avoided by the substitution of a layer of aluminum for that of chromium.

In C4 pad limited metallurgy, sequential layers of chromium, copper and gold are deposited on copper-doped aluminum interconnection chip metallurgy. Delamination, which may occur between layers of chromium and copper, can be avoided by sequentially evaporating aluminum, copper, and gold followed by lead/tin solder pads. Tin may be substituted for gold to prevent oxidation of the copper layer.

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