Browse Prior Art Database

Ion Milling to Remove Halo

IP.com Disclosure Number: IPCOM000051954D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Herdzik, RJ: AUTHOR [+3]

Abstract

Wafers in process that have contact pads, for solder mounds, especially in close proximity to one another can develop shorts or leakage paths because evaporant is deposited under the evaporant mask. This problem becomes serious when contact spacing is minimal.

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Ion Milling to Remove Halo

Wafers in process that have contact pads, for solder mounds, especially in close proximity to one another can develop shorts or leakage paths because evaporant is deposited under the evaporant mask. This problem becomes serious when contact spacing is minimal.

Ion gun etching can be performed on Pb-Sn and Pb-indium solder mounds having a halo, as shown in Fig. 1.

Wafers with this problem can be subjected to ion milling, and in a short period of time, one minute or less, the halo can be removed (Fig. 2).

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