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Evaluation of Charge Coupled Devices by use of Alpha Irradiation

IP.com Disclosure Number: IPCOM000051966D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Hsieh, CM: AUTHOR

Abstract

Charge-coupled devices (CCDs) are evaluated by use of alpha irradiation to produce a bit map display of soft errors. A non-random distribution of soft errors among identical C:CD cells across a chip irradiated by a source of alpha particles indicates the location of faulty cells, weak array loop or channel.

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Evaluation of Charge Coupled Devices by use of Alpha Irradiation

Charge-coupled devices (CCDs) are evaluated by use of alpha irradiation to produce a bit map display of soft errors. A non-random distribution of soft errors among identical C:CD cells across a chip irradiated by a source of alpha particles indicates the location of faulty cells, weak array loop or channel.

In Fig. 1, C:CD chip device or wafer 1 is placed on holder 2 and irradiated by alpha particle source 3. The C:CD cells are scanned by tester 4, and the number of bit errors per alpha hit are displayed on bit map display 5.

Variations in energy are possible by raising or lowering the alpha source relative to the device 1. Fig. 2 shows the mean number of bit errors per alpha hit versus alpha energy for a given potential well. The charge capacity of the potential well is proportional to the quotient delta E/3.6 over delta N electrons/well.

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