Browse Prior Art Database

Push Pull Driver Circuit using High and Low Barrier Schottky Diodes

IP.com Disclosure Number: IPCOM000051978D
Original Publication Date: 1981-Apr-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Eardley, DB: AUTHOR

Abstract

High and low barrier Schottky diodes are used to minimize circuit components while still preventing the simultaneous conduction of the pull-up and the discharge transistors of a push-pull driver circuit.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Push Pull Driver Circuit using High and Low Barrier Schottky Diodes

High and low barrier Schottky diodes are used to minimize circuit components while still preventing the simultaneous conduction of the pull-up and the discharge transistors of a push-pull driver circuit.

When T(1) and T(2) are on, the voltage from the base to the emitter of T(3) (V(BE3)) is equal to V(BE1) (ON) - V(F1) V(F2), where V(F1) and V(F2) are t voltage drops across high barrier Schottky diode D1 and low barrier Schottky diode D2, respectively. The high barrier SBD uses a platinum silicide anode, whereas the low barrier SBD uses a titanium-tungsten anode.

Since V(F1) - V(F2) is approximately equal to 0.3 V, then V(BE3) is equal to the forward conduction bias V(BE) of conducting T(1) - 0.3 V which causes T3 to be nonconducting.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]