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Browse Prior Art Database

Schottky Barrier Diode Leakage Reduction

IP.com Disclosure Number: IPCOM000052154D
Original Publication Date: 1981-May-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 58K

Publishing Venue

IBM

Related People

Clark, LJ: AUTHOR [+4]

Abstract

Schottky barrier diode contact openings are subjected to an oxidation following reactive ion etching to mask pinholes and protect the silicon areas from exposure to the emitter diffusion.

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Schottky Barrier Diode Leakage Reduction

Schottky barrier diode contact openings are subjected to an oxidation following reactive ion etching to mask pinholes and protect the silicon areas from exposure to the emitter diffusion.

As shown in Fig. 1, a pinhole 1 in silicon nitride layer 2 exposes silicon dioxide layer 3 in the Schottky barrier diode region during the reactive ion etch contact opening step. The pinhole 1 is then reproduced as pinhole 4 in silicon dioxide layer 3 (Fig. 2). This exposes silicon substrate 5 to the emitter diffusion (N+), thus forming an ohmic contact to silicon at 6 (Fig. 3). This is prevented by oxidizing the silicon wafers, after the reactive ion etch contact opening step, so as to grow approximately 500 angstroms of oxide, before the emitter diffusion window 7 is opened.

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