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Deuterium Implantation for Contiguous Bubble Devices

IP.com Disclosure Number: IPCOM000052408D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Best, J: AUTHOR [+6]

Abstract

Deuterium is a desirable ion species for the ion implantation of bubbl devices and especially for contiguous disk bubble devices. Implantation with deuterium induces more anisotropy field changes than with helium implantation, but requires less implantation time than when hydrogen is the species. Deuterium as an ion implantation species is a better compromise choice for contiguous disk bubble devices than either helium or hydrogen.

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Deuterium Implantation for Contiguous Bubble Devices

Deuterium is a desirable ion species for the ion implantation of bubbl devices and especially for contiguous disk bubble devices. Implantation with deuterium induces more anisotropy field changes than with helium implantation, but requires less implantation time than when hydrogen is the species. Deuterium as an ion implantation species is a better compromise choice for contiguous disk bubble devices than either helium or hydrogen.

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