Browse Prior Art Database

Method to Reveal Electrically and Optically Active Defects in Hg(x) Cd(1-x)Te

IP.com Disclosure Number: IPCOM000052439D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Irene, EA: AUTHOR

Abstract

The Hg(x)Cd(1-x)Te crystals useful in optical and electrical applicatio have defects that can be made sufficiently visible by crystal quality assessment by heating the crystals with mixtures of HNO(3) and HCL.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Method to Reveal Electrically and Optically Active Defects in Hg(x) Cd(1- x)Te

The Hg(x)Cd(1-x)Te crystals useful in optical and electrical applicatio have defects that can be made sufficiently visible by crystal quality assessment by heating the crystals with mixtures of HNO(3) and HCL.

Defects of the crystal dislocation type (D) and the impurity dislocation type
(S) are revealed. The (S) type defects are correlatable with electrical and optical crystal quality. An Hg(x) Cd(1-x) Te crystal treated for 5 seconds with a mixture of 0.25 HNO(3) 0.25 HCL 0.5 H(2)O reveals both the (S) and (D) type etch pits. The etching progresses more rapidly with added HNO(3). The etching progresses less rapidly with more HCL or H(2)O, with more sensitivity shown to H(2)O.

1