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Versatile Technique for Contact Metallurgy by Using Ion Beam Mixing Induced Silicides

IP.com Disclosure Number: IPCOM000052444D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chao, HH: AUTHOR [+3]

Abstract

In semiconductor device fabrication as electron beam lithography comes into use, temperatures above 550 degrees C are required for annealing the positi and neutral traps that are introduced in the process, but existing Al metallurgy systems are limited by Al-Si interdiffusion to temperatures around 400 degrees C.

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Versatile Technique for Contact Metallurgy by Using Ion Beam Mixing Induced Silicides

In semiconductor device fabrication as electron beam lithography comes into use, temperatures above 550 degrees C are required for annealing the positi and neutral traps that are introduced in the process, but existing Al metallurgy systems are limited by Al-Si interdiffusion to temperatures around 400 degrees
C.

The materials NbSi(2) and MoSi(2) provide higher temperature-resistant device contact metallurgy. The formation of MoSi(2) or NbSi(2) in the compact hole region can be achieved by the ion-beam mixing process. The Mo and Nb films on bare Si form disilicides in the ion beam mixing process, yet the Mo and Nb films do not react with the SiO(2) passivation in the ion beam mixing process.

In the process, after contact holes are opened or n regions are exposed through an SiO(2) layer, a thin film of Nb or Mo is deposited on the entire substrate. An ion implant of, for example, As at 2E 16/cm transforms the Nb or Mo into silicides in the opened holes, whereas the metal over the SiO(2) is unchanged. A selective etchant, for example, NH(4)OH H(2)0(2) water solution selectively etches away the metal over the SiO(2).

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