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Read Write Control Circuit Reference Voltage Generator

IP.com Disclosure Number: IPCOM000052524D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Marcello, B: AUTHOR [+3]

Abstract

For the read/write control of a memory cell array this circuit provides a reference voltage (at output SAR (Storage Address Register)) which with a reduction of one VBE drop reproduces well and very closely follows the correspondingly selected cell midway voltage of actual matrix cells. Driven from the circuit output is a tri-state read/write control circuit which is described in the following article. The tri-state circuit translates the reference voltage at output SAR to a voltage equal to the selected cell midway voltage. The midway voltage is finally used to drive sense amplifiers for reading a Harper cell array matrix.

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Read Write Control Circuit Reference Voltage Generator

For the read/write control of a memory cell array this circuit provides a reference voltage (at output SAR (Storage Address Register)) which with a reduction of one VBE drop reproduces well and very closely follows the correspondingly selected cell midway voltage of actual matrix cells. Driven from the circuit output is a tri-state read/write control circuit which is described in the following article. The tri-state circuit translates the reference voltage at output SAR to a voltage equal to the selected cell midway voltage. The midway voltage is finally used to drive sense amplifiers for reading a Harper cell array matrix.

The circuit shown in the drawing is designed such that node WL is equivalent to a selected word line in the array matrix, and VDN is equivalent to a selected cell down level. The difference between VDN and VWL (voltage at node WL) results in the same cell differential as in the array. The cell midway voltage VM is generated by the high impedance resistor divider network R6 and R7 with R6 = R7. VM is sensed by transistor T5 and translated by T6 and T7 to the proper value to drive a tri-state circuit from the SAR output. The resulting SAR output voltage is defined:. VSAR = VUPCL + VBE(TCL) - VBE(T1) - 1/2 VD1 - VBE(T5) +VBE(T7) + VBE(T6)

This circuit output can be shown to track very closely with the cell midway voltage.

The close-tracking capability of this circuit output voltage VSAR to th...