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Method of Producing a Printhead for Electrochemical Printing

IP.com Disclosure Number: IPCOM000052578D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Chai, HD: AUTHOR [+3]

Abstract

A method is described for fabricating an electrochemical printhead at a front face silicon wafer which has semiconductor circuits on its back face, so as to permit all printing electronics to be located on the actual printhead.

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Method of Producing a Printhead for Electrochemical Printing

A method is described for fabricating an electrochemical printhead at a front face silicon wafer which has semiconductor circuits on its back face, so as to permit all printing electronics to be located on the actual printhead.

The printhead described in this article is capable of printing alphanumeric characters, graphics and other symbols in an elemental matrix form. The elements may be any size or shape. The fabrication utilizes a silicon (Si) wafer, the same as those used to fabricate integrated circuits.

Fig. 1 shows a section of a silicon wafer 10 in preparation for construction of the printhead. The printhead surface elements will be on one side of the wafer, and a monolithic integrated circuit on the other side. To get electrical connection from one side to the other, holes 12 are etched through the silicon and filled with a conductive paste, such as molybdenum (Fig. 2). Next, a layer 14 of silicon dioxide (SiO(2)) is grown on the surface of the wafer (Fig. 3).

Photolithographic techniques are employed to remove the oxide in selected regions of the wafer. The area 16 of silicon dioxide that remains forms an insulating gap between the anode and cathode of the printing elements (Fig. 4). A layer 18 of ruthenium dioxide (RuO(2)) is then sputtered onto the wafer (Fig.
5), and the wafer ground or polished to remove the ruthenium dioxide on top of the silicon dioxide (Fig. 6). It should be noted that...