Browse Prior Art Database

High Speed Multilayer Ceramic Chip Carrier

IP.com Disclosure Number: IPCOM000052645D
Original Publication Date: 1981-Jun-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 3 page(s) / 102K

Publishing Venue

IBM

Related People

Ho, CW: AUTHOR

Abstract

In Fig. 1, a VLSI (very large-scale integrated) chip carrier with an integrated decoupling capacitor structure has its capacitor plates 10 oriented in the "vertical y" direction in slots within the chip carrier. The substrate contains a large amount of decoupling capacitance which can regulate the power supply system in the presence of simultaneous switching activities on a semiconductor chip.

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High Speed Multilayer Ceramic Chip Carrier

In Fig. 1, a VLSI (very large-scale integrated) chip carrier with an integrated decoupling capacitor structure has its capacitor plates 10 oriented in the "vertical y" direction in slots within the chip carrier. The substrate contains a large amount of decoupling capacitance which can regulate the power supply system in the presence of simultaneous switching activities on a semiconductor chip.

In the structure, the capacitor plates 10 interface with the chips via the "tabs" T of the capacitor and plates 10 which come up to the top surface of the substrate and make contact to the top surface metallurgy (TSM) (which is defined by photolithographic thin film techniques). Because there are several power supply lines in the substrate, the TSM has a set of strip patterns S(1) - S(4) on each chip site in which each strip S contacts a row of tabs T and is electrically separate from other adjacent strips. Strips S(1) - S(4) are at power supply voltages V(1), V(2) and V(3), as shown. Thin film lines are subsequently fabricated above the TSM layer. These lines use the TSM as the ground plane for the return currents and suffer in propagation speed due to the multiple "slits" SL in the ground plane. C-4 solder balls are shown resting upon the TSM with the chips removed for convenience of illustration.

In the proposed improvement, one extra horizontal green ceramic sheet is placed on the top of the substrate structure. It is laminated with the re...