Browse Prior Art Database

Polyvinyl Alcohol as a Photoresist for Electron Beam Exposure

IP.com Disclosure Number: IPCOM000052802D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brown, KH: AUTHOR [+4]

Abstract

A new positive photoresist for use in electron beam exposures has been developed.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Polyvinyl Alcohol as a Photoresist for Electron Beam Exposure

A new positive photoresist for use in electron beam exposures has been developed.

Polyvinyl alcohol is dissolved in water, spin coated on silicon wafers, and baked at 70 degrees C. The resulting films are hard, non-tacky and safe to handle in room light. A series of silicon wafers were coated with approximately
1.5 mu m of the material, exposed by electron beam with varying conditions and developed in solution of 75% wafer/25% acetone. Initial experiments used a dose between 0.5 and 20x10/-5/ coulombs/cm/2/ and development times of between
O.5 and 1.5 minutes. Under these conditions it was possible to resolve 0.5 mu m lines and spaces, and the material appears to be about 5 times faster than, e.g., polymethyl methacrylate.

When used as a photoresist, it has the following advantages: 1. The material can be expected to adhere well to metal (including silicon) surfaces by virtue of its high hydroxyl content. 2. The use of water as a solvent and developer minimizes the need for noxious organic solvents. 3. The material is cheap and plentiful so that a ready supply can always be assured. 4. Special lighting is not necessary in handling the coated material.

1