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Controlled Microleaving Process

IP.com Disclosure Number: IPCOM000052805D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Blech, IA: AUTHOR [+5]

Abstract

A method for producing microscopic cleavage in a periodic array by deposition of a highly stressed film onto a sample, thereby producing controlled cleavage in crystalline materials is described.

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Controlled Microleaving Process

A method for producing microscopic cleavage in a periodic array by deposition of a highly stressed film onto a sample, thereby producing controlled cleavage in crystalline materials is described.

It has been found that stress in films can be relieved by a regular fracture pattern in crystalline materials. The fracture will occur along cleavage planes, and the stress relief will induce a periodic fracture.

Films of niobium were deposited on Si(3)N(4), which was deposited on (100)Si. The niobium films were about 1 mu thick and, when scribed parallel to a 100 plane, we found a periodic cleavage along the 110 planes with approximately a 2 mu period. This is shown in Fig. 1.

The process for microcleaving crystals was also examined on GaAs with various orientations. Figs. 2A and 2B show cleavages on (100)GaAs and (111)GaAs, respectively.

This process allows the cleaving of crystalline materials on a scale finer than any mechanical method. Also, devices can be prepared on a heretofore unachievable scale (i.e., GaAs laser arrays).

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