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Step Coverage During Thin Film Deposition

IP.com Disclosure Number: IPCOM000052806D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+4]

Abstract

A method is desirable for improving step coverage of a thin film during thin film deposition. The method involves simultaneously bombarding the growing film during deposition by a directed ion beam of controlled ion energy and current density. The ion beam causes a partial resputtering of the coating material which redistributes the material sideways and thereby eliminates the formation of a step edge crack.

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Step Coverage During Thin Film Deposition

A method is desirable for improving step coverage of a thin film during thin film deposition. The method involves simultaneously bombarding the growing film during deposition by a directed ion beam of controlled ion energy and current density. The ion beam causes a partial resputtering of the coating material which redistributes the material sideways and thereby eliminates the formation of a step edge crack.

Fig. 1 illustrates the method wherein a coating material(A)is sputtered from a target 1 by an ion beam 2 generated by an ion source 3. Simultaneously, a second independent ion source 4 generates a beam 5 which strikes the growing film on substrate 6 and causes partial resputtering of the film material.

Films of SiO(2) have been deposited onto substrates which had steps of 2000 angstroms height of PbAuIn alloy. An argon ion beam of 1000 eV, 40 mA was used. Simultaneously, a second argon (with a small amount of oxygen added) ion beam of 1000 eV (several mA) bombarded the growing film, causing partial resputtering. The amount of resputtering is controlled by the current in the resputtering beam 5, and is preferably around 20 percent. That is, one half the depositing film is resputtered away.

This resputtering causes a substantial movement of coating material SiO(2) sideways, in the plane of the substrate 6, enabling SiO(2) to fill in the corners of the steps 7, avoiding crack formation. The resulting profiles are shown s...