Browse Prior Art Database

Fabrication of Three Dimensional Micro Electronic Structures by Molecular Beam Epitaxy

IP.com Disclosure Number: IPCOM000052807D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Rupprecht, HS: AUTHOR [+2]

Abstract

Three-dimensional semiconductor device structures may be fabricated by control of surface stoichiometry of a growing compound semiconductor device body such that a dopant can be caused to enter particular sublattice sites.

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Fabrication of Three Dimensional Micro Electronic Structures by Molecular Beam Epitaxy

Three-dimensional semiconductor device structures may be fabricated by control of surface stoichiometry of a growing compound semiconductor device body such that a dopant can be caused to enter particular sublattice sites.

A GaAs body growing under molecular beam epitaxy in the presence of Ge as a dopant may, under the influence of temperature, incorporate the Ge on Ga lattice sites to serve as a donor and on As lattice sites to serve as an acceptor, forming thereby n- and p-type layered structures.

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