Browse Prior Art Database

Single Crystal Lithographic Structures

IP.com Disclosure Number: IPCOM000052809D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Broers, AN: AUTHOR [+4]

Abstract

A method is provided for preparing high quality single-crystal lithographic microstructures without cracks or defects and near atomic dimensions.

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Single Crystal Lithographic Structures

A method is provided for preparing high quality single-crystal lithographic microstructures without cracks or defects and near atomic dimensions.

Heretofore, polycrystalline microlithographic structures have been prepared by vapor depositing thin films of Au and Nb on thin windows of Si(3)N(4). These films are polycrystalline with leads to nanostructures which often have microcracks or discontinuities present as described by A. N. Broers, et al, Proc. 9th Int. Electron Microscope Conference, Toronto, 1978. A comparable contamination resist procedure has been used to produce nanostructures which are as small as 20 nanometers wide.

A procedure is described herein for preparing single-crystal nanostructures. The following are advantages thereof over polycrystalline structures: 1. Continuous lines without cracks or defects. Single crystals allow fine lines to be prepared which do not have microcracks or grain boundaries, as illustrated in Fig. 1. 2. Oriented films from which structures which are written along preferred crystallographic directions. Directional writing in a single crystal improves edge sharpness of the structures since irregularly shaped grains are avoided and directional effects are minimized, as indicated in Fig. 2. 3. Controlled structures with known defect boundary directions. Fig. 3 shows how to write along known defect directions and to investigate electrical properties of a single defect. 4. Free-standing structures with no backing substrate.

Steps of the fabrication procedure are as follows:...