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Low Temperature Plasma Deposited Electron Injector Oxide

IP.com Disclosure Number: IPCOM000052868D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-11
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Hutchins, GL: AUTHOR

Abstract

This method provides a wide range of silicon in silicon-rich insulators at relatively low temperatures, equal to or less than 350 Degrees Celsius, using plasma-enhanced deposition of silane and oxygen. These silicon-rich insulators may be used advantageously in electron injectors, as taught in, e.g., U.S. Patent 4,104,675.

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Low Temperature Plasma Deposited Electron Injector Oxide

This method provides a wide range of silicon in silicon-rich insulators at relatively low temperatures, equal to or less than 350 Degrees Celsius, using plasma-enhanced deposition of silane and oxygen. These silicon-rich insulators may be used advantageously in electron injectors, as taught in, e.g., U.S. Patent 4,104,675.

In a plasma-deposition tool, the temperature of the substrate is maintained at 350 Degrees Celsius with a total pressure of 2 torr, RF power equals 50 watts and RF frequency equal to 13.5 MHz. The reactive gases of oxygen O(2) and silane SiH are introduced into the tool at an oxygen-to-silane silane ratio of approximately 1 to 0.5, producing a film growth rate of 200 to 300 angstroms per minute. The ratio of gases may be varied so as to produce a silicon dioxide matrix having excess silicon from zero to substantially pure silicon.

A sandwiched structure composed of two silicon-rich silicon dioxide layers having interposed therebetween a layer of silicon dioxide may be fabricated in the same system or tool with minimum effort by merely adjusting the oxygen- silane ratios.

By using this method, a sandwiched structure or dual injector stack, of the type disclosed in an article entitled "Electrically-Alterable Memory Using A Dual Electron Injector Structure" by D. J. Di Maria, K. M. DeMeyer and D. W. Dong, IEEE Electron Device Letters EDL-1 179-181 (September 1980), is produced which provides...