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Browse Prior Art Database

Palladium Oxide Etching Process

IP.com Disclosure Number: IPCOM000052905D
Original Publication Date: 1981-Jul-01
Included in the Prior Art Database: 2005-Feb-12
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gartner, HM: AUTHOR [+3]

Abstract

Palladium oxide (PdO) may inadvertently be formed on palladium surfaces such that free palladium cannot be etched by conventional techniques.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Palladium Oxide Etching Process

Palladium oxide (PdO) may inadvertently be formed on palladium surfaces such that free palladium cannot be etched by conventional techniques.

The following process has the capability of removing any PdO that may have been formed due to the presence of either oxygen or water vapor in the furnace ambient without attacking or causing damage to any surrounding semiconductor device structures.

1) Immerse the substrate having a palladium film thereon, such as a semiconductor wafer, into a solution of sodium hypophosphite (NaH(2)PO(2)) and potassium hydroxide (KOH) at 20 degrees C to 5O degrees C for two minutes. solution comprises 67 grams/liter parts NaH(2)PO(2) and 25 grams/liter parts KOH.

2) Rinse the wafer in deionized H(2)0 for one minute.

3) Etch the now PdO-free palladium surfaces in KI + I(2) + H(2)O for about two minutes.

4) Rinse in deionized H(2)O for one minute.

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