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Method for Producing Lithographic Structures Using High Energy Electrons

IP.com Disclosure Number: IPCOM000053010D
Original Publication Date: 1981-Aug-01
Included in the Prior Art Database: 2005-Feb-12
Document File: 3 page(s) / 36K

Publishing Venue

IBM

Related People

Broers, AN: AUTHOR [+3]

Abstract

A process is provided for producing lithographic structures by using high energy electrons. It is used to prepare electron beam lithographic structures near atomic levels where only the high energy electron beam impinges. Extremely fine lines are obtained.

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Method for Producing Lithographic Structures Using High Energy Electrons

A process is provided for producing lithographic structures by using high energy electrons. It is used to prepare electron beam lithographic structures near atomic levels where only the high energy electron beam impinges. Extremely fine lines are obtained.

Heretofore, a high resolution scanning transmission electron microscope has been used to produce fine lines of Au and Nb approximately 20 nanometers (nm) wide using a contamination resist process with subsequent ion milling. Resolution is limited by the lateral spreading of the contaminant due to the generation of secondary electrons over a large excitation area compared to the size of the electron probe. Finer dimensions can be achieved by writing lines in NaCl and MgF(2) crystals, as described by Broers, et al., in an article ``High Resolution Electron Beam Fabrication using STEM,'' Proc. 9th International Congress on Electron Microscopy, Toronto, Canada, 1978, pages 343-354, where dimensions as small as 5 nm have been obtained. It was believed that an in situ etching occurred by electron beam interaction with the material so that holes or lines were cut. There has been insufficient understanding of the metallurgical and chemical processes occurring under the influence of the electron beam.

The process hereof for providing lithographic structures uses ionic salts including halogen-type salts. It has the following advantages: (1) The structures are produced only by high energy electrons, not by secondaries. (2) The structures can be as small as the probe dimensions provided the salts are in the form of very thin films. (3) Positive and negative resists can be obtained depending on the salt. (4) It is contamination-free. Not only are holes drilled to make a mask as described by Broers,...