Browse Prior Art Database

Thin Film Magnetic Head Assembly

IP.com Disclosure Number: IPCOM000053169D
Original Publication Date: 1981-Sep-01
Included in the Prior Art Database: 2005-Feb-12
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Barlow, M: AUTHOR [+4]

Abstract

A thin film magnetic head assembly is formed with the read and write elements in a side-by-side configuration, deposited on a substrate. The read transducing gap is made thinner than the write gap.

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Thin Film Magnetic Head Assembly

A thin film magnetic head assembly is formed with the read and write elements in a side-by-side configuration, deposited on a substrate. The read transducing gap is made thinner than the write gap.

A method for making such side-by-side configuration employs a lift off process in which a thin insulator layer, forming the thin transducing gap for the read element, is sputtered onto the wafer, after the P1 layers of the read element and write element have been deposited (Fig. 1). A resist 2 is applied over the insulator gap layer 1 across the wafer, and the mask is exposed and developed so that the resist remains only on top of the read element, as illustrated in Fig. 2. A layer 3 of Al(2)O(3) is sputtered over the entire wafer for forming the transducing gap, as shown in Fig. 3. The resist over the read element portion only is removed with the sputtered Al(2)O(3), so that a structure such as depicted in Fig. 4 results. Thus, the transducing gap layer of Al(2)O(3) over the read element is relatively thin, about 0.4 mu m, whereas that for the write element is much thicker, about 1.0 mu m.

Another acceptable sequence of lift-off process is to lift-off the first Al(2)O(3) layer rather than the second layer. In this case, the first layer would be equal to the difference in gap thickness, and the second layer would equal the read gap thickness.

An alternative method, for providing different gap thicknesses for the read and write elements...