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Integrated Device for Diode Transistor Logic

IP.com Disclosure Number: IPCOM000059637D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Knepper, RW: AUTHOR [+2]

Abstract

In DTL (Diode Transistor Logic), diodes are connected to a transistor, as shown in Fig. 1. The diodes are preferably located close to the transistor. However, the layout area is relatively large because the individual diodes and the transistor have to be isolated from each other. In the disclosed structure, as shown in Figs. 2 and 3, the transistor and all the diodes are integrated in the same subcollector bed. This reduces the layout area required by approximately 50%. The special P-type ion implant required may be boron ions. The surface concentration is low enough for the formation of Schottky barrier diodes, while at a distance from the surface, it is high so that the resistance to the transistor base is not excessive. Low barrier Schottky diodes are required for the operation of the DTL configuration, as shown in Fig.

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Integrated Device for Diode Transistor Logic

In DTL (Diode Transistor Logic), diodes are connected to a transistor, as shown in Fig. 1. The diodes are preferably located close to the transistor. However, the layout area is relatively large because the individual diodes and the transistor have to be isolated from each other. In the disclosed structure, as shown in Figs. 2 and 3, the transistor and all the diodes are integrated in the same subcollector bed. This reduces the layout area required by approximately 50%. The special P-type ion implant required may be boron ions. The surface concentration is low enough for the formation of Schottky barrier diodes, while at a distance from the surface, it is high so that the resistance to the transistor base is not excessive. Low barrier Schottky diodes are required for the operation of the DTL configuration, as shown in Fig. 1. They may be provided by any one of a number of metals [*]. Reference [*]Sze, Physics of Semiconductor Devices, New York: John Wiley & Sons, 1981, Second Edition, p. 291.

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