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Sense-Signal Enhancement in MTL Memory Cells

IP.com Disclosure Number: IPCOM000059639D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 61K

Publishing Venue

IBM

Related People

Wong, RC: AUTHOR

Abstract

In MTL (merged-transistor logic) products, memory access may be accomplished by injector coupling with accompanying advantages and disadvantages. While the cell is small in area and operates at low power, the sense signal is very small and read access is very slow and difficult. This article describes a sensing scheme involving the use of a dynamic cross-coupled sense latch for MTL cells which provides for simpler and more flexible array organization and enhanced MTL memory cell bit line signals for reading. To enhance the sense signal, an MTL cell with split-bottom emitters (collectors of inversely-operated transistors), such as illustrated in Fig. 1, has been previously employed [*]. By means of the sensing rearrangement shown in Fig.

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Sense-Signal Enhancement in MTL Memory Cells

In MTL (merged-transistor logic) products, memory access may be accomplished by injector coupling with accompanying advantages and disadvantages. While the cell is small in area and operates at low power, the sense signal is very small and read access is very slow and difficult. This article describes a sensing scheme involving the use of a dynamic cross-coupled sense latch for MTL cells which provides for simpler and more flexible array organization and enhanced MTL memory cell bit line signals for reading. To enhance the sense signal, an MTL cell with split-bottom emitters (collectors of inversely-operated transistors), such as illustrated in Fig. 1, has been previously employed [*]. By means of the sensing rearrangement shown in Fig. 2, cell size can be made smaller, wirings reduced, and read disturb minimized, thereby yielding a faster and larger sense signal. Transistors T4 and T5 provide the cross-coupled control to the sense current sink, such cross-coupling being necessary in order to allow the sense point to go lower in voltage while receiving a larger current. During sensing, the word line WL is raised and the sense current JS is turned on for the differential amplifier. Referring to Fig. 2, the disclosed scheme differs from the one described in [*] in the following particulars:
1) One word line is used in the X direction instead of two drain lines. 2) Bit lines are connected to the split-bottom emitters inst...