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Insolubilization of Phenolic Resist Image in Aqueous Base

IP.com Disclosure Number: IPCOM000059851D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ito, H: AUTHOR [+2]

Abstract

A method for insolubilizing patterned phenolic resists in aqueous base by treatment with methyl isocyanate is disclosed. The treatment allows subsequent etching of the substrate with a base etchant.

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Insolubilization of Phenolic Resist Image in Aqueous Base

A method for insolubilizing patterned phenolic resists in aqueous base by treatment with methyl isocyanate is disclosed. The treatment allows subsequent etching of the substrate with a base etchant.

The diazonaphthoquinone/novolac resists commonly used in the semiconductor industry are very attractive in many respects. Development with aqueous base is one of the most outstanding features of the system. However, the aqueous base development can create a problem in certain applications, such as etching of alumina, because the aqueous base etchant dissolves the masking resist before the substrate begins to be etched.

One approach to the problem is to find better etching conditions where the dissolution of the masking phenolic resist is minimal for a required period of time. Our approach is a simple insolubilization of the phenolic resist after patterning. The insolubilization is achieved by treating the patterned resist with a reagent that reacts with the phenolic functionality to chemically change the structure of the resin: the polar, acidic resin is converted to a nonpolar, base-insoluble material. Such reagents include methyl and other isocyanates.

Disclosed anonymously.

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