Browse Prior Art Database

Ion Implantation of Circuit Board Ceramics

IP.com Disclosure Number: IPCOM000059856D
Original Publication Date: 1986-Jan-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Batchelder, JS: AUTHOR

Abstract

Ion beam implantation to the periphery of the wafer is used as a means to strengthen and increase fracture resistance of ceramic parts used in first level packaging.

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Ion Implantation of Circuit Board Ceramics

Ion beam implantation to the periphery of the wafer is used as a means to strengthen and increase fracture resistance of ceramic parts used in first level packaging.

The process entails implanting ions such as carbon, chromium, titanium, zirconium or other ions at energies of sev hundred KeV and dose rates on the order of 1017 ions per square centimeter. The wafers would be stacked together and implanted on the edges as a batch. A single source producing 70 milliamps of ions in a dispersed beam could treat one edge of 50,000 wafers in about 2 hours.

Disclosed anonymously.

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