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Self-Aligned Metallization for MBE Grown Bipolar Technology

IP.com Disclosure Number: IPCOM000059971D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 50K

Publishing Venue

IBM

Related People

Iyer, SS: AUTHOR [+3]

Abstract

In order to fully exploit the performance capabilities of narrow base bipolar transistor, it is necessary to develop a high conductivity local interconnect scheme with small, low resistance contacts. A method is described herein by which this can be accomplished. Fig. 1 shows a bipolar structure fabricated having narrow base widths using Si grown by molecular beam epitaxy (MBE). A silicon dioxide masking layer was used to define windows for the extrinsic base areas which are used to contact the base. In forming the bipolar structure of Fig. 1 the silicon dioxide layer was etched off and a low temperature chemical vapor deposited (CVD) oxide layer deposited to be used in forming contacts to the emitter and base. Then, according to the technique of this publication, the masking CVD oxide layer is etched off.

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Self-Aligned Metallization for MBE Grown Bipolar Technology

In order to fully exploit the performance capabilities of narrow base bipolar transistor, it is necessary to develop a high conductivity local interconnect scheme with small, low resistance contacts. A method is described herein by which this can be accomplished. Fig. 1 shows a bipolar structure fabricated having narrow base widths using Si grown by molecular beam epitaxy (MBE). A silicon dioxide masking layer was used to define windows for the extrinsic base areas which are used to contact the base. In forming the bipolar structure of Fig. 1 the silicon dioxide layer was etched off and a low temperature chemical vapor deposited (CVD) oxide layer deposited to be used in forming contacts to the emitter and base. Then, according to the technique of this publication, the masking CVD oxide layer is etched off. A new (CVD) layer (Si02 or Si3N4) is conformally deposited. This is then reactive ion etched to yield the sidewall spacer structure as shown in Fig. 2. At this point a blanket layer of metal, such as Ti, is deposited, reacted and selectively etched as in salicide technology. Alternatively, tungsten may be selectively deposited on the exposed silicon areas by CVD techniques. This will yield the self-aligned metallized MBE grown bipolar structure shown in Fig. 3.

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