Browse Prior Art Database

Parallel Plate Reactive Ion Etch Plasma Space Modification And Foreign Material Elimination

IP.com Disclosure Number: IPCOM000060089D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kerbaugh, ML: AUTHOR

Abstract

To improve the uniformity of resist etching and to reduce the amount of foreign material which could fall on the wafer resist mask due to sputtering during the etch process, a thin polycarbonate resin disk shield may be mounted under the upper electr

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Parallel Plate Reactive Ion Etch Plasma Space Modification And Foreign Material Elimination

To improve the uniformity of resist etching and to reduce the amount of foreign material which could fall on the wafer resist mask due to sputtering during the etch process, a thin polycarbonate resin disk shield may be mounted under the upper electr

In parallel plate reactive ion etch (RIE) tools, the upper aluminum electrode is the source of sputtered aluminum during the etch process. A clear polycarbonate resin disk about 1/8" thick is inserted under the upper electrode to act as a shield against foreign material and to shape the plasma cavity and thereby improve the plasma uniformity.

As shown in the figure, an easily cleaned polycarbonate resin disc shield 10 (which is the same diameter as the upper aluminum electrode 11) may be fastened with clamps 12 located around the perimeter of the electrode. The clamps are designed to accommodate the shield at any one of three possible positions, i.e., A, B or C. The thumbscrew 13 mounted at the center of the disk is used to deflect the disk; thus, a plasma chamber 14 can be formed between the polycarbonate disk 10 and the lower electrode 15 having either a convex top "X" or concave top "Y". T curvature, either concave or convex, is varied by the thumbscrew adjustment.

Disclosed anonymously.

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