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Process for Etching Chromium

IP.com Disclosure Number: IPCOM000060122D
Original Publication Date: 1986-Feb-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hinsberg, W: AUTHOR [+3]

Abstract

An etching process is described in which chromium is selectively etched by a solution containing Thiourea, sulfuric acid and water (TSW).

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Process for Etching Chromium

An etching process is described in which chromium is selectively etched by a solution containing Thiourea, sulfuric acid and water (TSW).

The process for selectively etching a chromium film includes the steps of electrically connecting a bar of zinc to the chromium film and immersing the zinc bar and chromium film simultaneously into the TSW. Due to the higher chemical potential of zinc when compared to chromium, the chromium oxide on the face of the film is reduced to chromium which is then attacked by the sulfuric acid.

With a solution containing 3.5% Thiourea, 3.5% sulfuric acid and 93% water which is heated to about 55OEC, the TSW etches a chromium film in a time frame of 10 to 15 seconds without damage to other parts of the structure such as NiFe, Cu, etc.

Disclosed anonymously.

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