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Low-Pass Resistive Decoupling Elements for Desensitizing Bipolar Cross-Coupled Circuits to Single Event Upsets

IP.com Disclosure Number: IPCOM000060144D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Voldman, SH: AUTHOR

Abstract

For bipolar cross-coupled cells (e.g., complementary transistor logic (CTL) (Fig. 1), merged transistor logic (MTL) (Fig. 2), etc., a resistor element R is inserted in each of the cross-coupled interconnections to reduce the net charge imbalance effect on the cell when charge traverses the cross-coupled junction. The resistor raises the effective RC time of the cell to a value larger than the charge collection transient time to allow decoupling of the half cells, e.g., for more than one nanosecond. Charge, generated by noise or radiation in the base or collector regions which traverse the cross-coupled junction, affects the collector node potential of that half cell but not the collector of the other side in each of the circuits of Fig. 1 and Fig. 2. The effect of charge collection at the emitter-base junction is also reduced.

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Low-Pass Resistive Decoupling Elements for Desensitizing Bipolar Cross- Coupled Circuits to Single Event Upsets

For bipolar cross-coupled cells (e.g., complementary transistor logic (CTL) (Fig.
1), merged transistor logic (MTL) (Fig. 2), etc., a resistor element R is inserted in each of the cross-coupled interconnections to reduce the net charge imbalance effect on the cell when charge traverses the cross-coupled junction. The resistor raises the effective RC time of the cell to a value larger than the charge collection transient time to allow decoupling of the half cells, e.g., for more than one nanosecond. Charge, generated by noise or radiation in the base or collector regions which traverse the cross-coupled junction, affects the collector node potential of that half cell but not the collector of the other side in each of the circuits of Fig. 1 and Fig. 2. The effect of charge collection at the emitter-base junction is also reduced. The resistor element can be either a polysilicon contact or a diffused resistor. Thus, for bipolar cells in which these charge collection mechanisms contribute to the soft error rate (SER), there is a significant reduction in the SER due to this decoupling resistor. This technique can also be applied to known resistor-loaded ECL cells.

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