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Method for Improving a RIE System Which Enhances Etch Rates and Ratios While Allowing Tool Load Automation

IP.com Disclosure Number: IPCOM000060371D
Original Publication Date: 1986-Mar-01
Included in the Prior Art Database: 2005-Mar-08
Document File: 2 page(s) / 68K

Publishing Venue

IBM

Related People

Bondur, JA: AUTHOR [+3]

Abstract

This article proposes the use of a plastic material to cover copper electrodes in the RIE (reactive ion etch) tools used in manufacturing semiconductor devices. The concept results in improved process control, full batch processing, substantially reduced costs, and is amenable to automation. When silicon slabs are used as cathodes in semiconductor processing, several areas of concern exist. Initially, they are quite expensive, adding substantially to manufacturing costs. Cooling of wafers can be a problem in optimizing etch rates. The silicon plate reduces heat transfer from the wafer, thereby limiting the usable RF (radio frequency) power during etching so that the resist integrity can be guaranteed for best imaging control. Wafer yields using silicon have been affected by metallic sputtering from the system walls.

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Method for Improving a RIE System Which Enhances Etch Rates and Ratios While Allowing Tool Load Automation

This article proposes the use of a plastic material to cover copper electrodes in the RIE (reactive ion etch) tools used in manufacturing semiconductor devices. The concept results in improved process control, full batch processing, substantially reduced costs, and is amenable to automation. When silicon slabs are used as cathodes in semiconductor processing, several areas of concern exist. Initially, they are quite expensive, adding substantially to manufacturing costs. Cooling of wafers can be a problem in optimizing etch rates. The silicon plate reduces heat transfer from the wafer, thereby limiting the usable RF (radio frequency) power during etching so that the resist integrity can be guaranteed for best imaging control. Wafer yields using silicon have been affected by metallic sputtering from the system walls. Polymer buildup during runs frequently requires oxygen plasma cleaning between runs. The polyarylate or polycarbonate cathode used in place of the silicon cathode addresses most of these problems. Fig. 1 shows a cross-section of the polymer cathode design. An aluminum cathode cover 1 (> 1/2-inch thick) has aluminum wafer supports 2 screwed to its base. The diameter of these supports is 1/16-inch narrower than the diameter of the wafer. The polymer stencil 3 is used to cover the aluminum cathode cover and protects the wafers from metal sputtering. Wafers are positioned in recesses 4 cut into the polymer plate so that no parts of the metal cathode are exposed to the plasma. Wafers are positioned so the surf...